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PM2301E,JD,MOSFETS

PM2301E

MOS ,PM2301E ,P-ch ,1.2W ,-2.5A ,-20V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： JD_PM2301E.pdf

Product number：	MOS-M2301P1W202F5F20N01JD
Manufacturer Product Number：	PM2301E
Manufacturer ：	JD
Series ：	JD-MOSFET
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	1.2W
Continuous Drain Current (ID) ：	-2.5A
Drain-Source Voltage (V) ：	-20V
Package ：	SOT-23
Description：	MOS ,PM2301E ,P-ch ,1.2W ,-2.5A ,-20V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-MOSFET
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	JD_PM2301E.pdf

Lead time： Estimated delivery date 2026-04-28

Quantity

Unit Price

5

$0.028114

20

$0.020617

100

$0.018118

300

$0.014369

Quantity

Unit Price

1000

$0.011870

3000

$0.009996

* Order quantity ：

MPQ：3000

MOQ： 3000

MOQ：5

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When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the reasons for the gate threshold voltage of SiC MOSFET There may be several reasons for the different gate threshold voltages (Vth) of SiC MOSFETs, including:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

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