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JX3S0040R065M,JX,MOSFETS

JX3S0040R065M

MOS ,JX3S0040065M ,N-ch ,325W ,60A ,650V ,TO247-3

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The image is for reference only, please refer to the drawing for details

Company Profile：公司简介.pdf

Data Sheet： JX3S0040065M.pdf

Product number：	MOS-MM127N325W60A65020JX
Manufacturer Product Number：	JX3S0040R065M
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	325W
Continuous Drain Current (ID) ：	60A
Drain-Source Voltage (V) ：	650V
Package ：	TO247-3
Description：	MOS ,JX3S0040065M ,N-ch ,325W ,60A ,650V ,TO247-3

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX3S0040065M.pdf

Lead time： Estimated delivery date 2026-03-29

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$17.363077

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$14.179846

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$11.575385

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$10.128462

1000

$8.392154

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MOQ： 1800

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Product Recommendation Maker Dynamics Applications

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