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JX4S0060R065M,JX,MOSFETS

JX4S0060R065M

MOS ,JX4S0060R065M ,N-ch ,150W ,36A ,650V ,TO247-4

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The image is for reference only, please refer to the drawing for details

Company Profile：公司简介.pdf

Data Sheet： JX4S0060R065M.pdf

Product number：	MOS-MM130N150W36A65021JX
Manufacturer Product Number：	JX4S0060R065M
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	150W
Continuous Drain Current (ID) ：	36A
Drain-Source Voltage (V) ：	650V
Package ：	TO247-4
Description：	MOS ,JX4S0060R065M ,N-ch ,150W ,36A ,650V ,TO247-4

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX4S0060R065M.pdf

Lead time： Estimated delivery date 2026-08-09

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Unit Price

1

$9.595385

10

$7.836231

50

$6.396923

Quantity

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200

$5.597308

1000

$4.637769

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MPQ：1800

MOQ： 1800

MOQ：1

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Product Recommendation Maker Dynamics Applications

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1200V SiC MOSFET tested under short-circuit conditions Short circuit capability of 1200 V SiC MOSFET and overcurrent protection solution using ready-made driver IC. Several design considerations were discussed to ensure accurate measurements. The test results indicate that the short-circuit capability of SiC MOSFET is highly correlated with the drain voltage and gate voltage, but not sensitive to the shell temperature and switching speed. By reducing the gate drive voltage or reducing the bus voltage, a longer endurance time can be achieved, but these solutions will lower the performance of SiC MOSFETs.

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What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

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What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

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The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

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