JX3S0750R170M_JX_MOSFETS_N-ch_60W_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

JX-MOS

Product Type

MOSFETS

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX3S0750170M.pdf

File Type

File Name

Company Profile

公司简介.pdf

Data Sheet

JX3S0750170M.pdf

Lead time： Estimated delivery date 2025-05-01

Quantity

Unit Price

$4.340769

$3.544962

$2.893846

Quantity

Unit Price

200

$2.532116

1000

$2.098039

Online Inquiry

* Order quantity ：

MPQ：1800

MOQ： 1800

Product Recommendation Maker Dynamics Applications

JX4S0040R065M

MOS ,JX4S0040065M ,N-ch ,325W ,60A ,650V ,TO247-4

$8.392154 More
JX7S0750R170T3

MOS ,JX7S0750R170T3 ,N-ch ,60W ,5A ,1700V ,TO-263-7

$2.098039 More
JX3S0320R065M

MOS ,JX3S0320R065M ,N-ch ,65W ,8A ,650V ,TO247-3

$1.987615 More
JX7S0150R330T3

MOS ,JX7S0150R330T3 ,N-ch ,357W ,35A ,3300V ,TO-263-7

$66.253846 More
JX4S0060R065M

MOS ,JX4S0060R065M ,N-ch ,150W ,36A ,650V ,TO247-4

$4.637769 More
JX3S0040R120M

MOS ,JX3S0040R120M ,N-ch ,325W ,60A ,1200V ,TO247-3

$3.975231 More
JX3S0025R170M

MOS ,JX3S0025R170M ,N-ch ,484W ,100A ,1700V ,TO247-3

$22.084615 More

Product Recommendation Maker Dynamics Applications

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

What are the reasons for the gate threshold voltage of SiC MOSFET There may be several reasons for the different gate threshold voltages (Vth) of SiC MOSFETs, including:

Product number：	MOS-MM140N0W60M1017220JX
Manufacturer Product Number：	JX3S0750R170M
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	60W
Continuous Drain Current (ID) ：	5A
Drain-Source Voltage (V) ：	1700V
Package ：	TO247-3
Description：	MOS ,JX3S0750R170M ,N-ch ,60W ,5A ,1700V ,TO247-3

JX3S0750R170M,JX,MOSFETS

JX3S0750R170M

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

JX3S0750R170M,JX,MOSFETS

JX3S0750R170M

File

Related Series