HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

ever ohms fuse current diverter Alloy resistance Precision resistor walter SMD fuse

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

JX4S0070R170M,JX,MOSFETS

JX4S0070R170M

MOS ,JX4S0070R170M ,N-ch ,242W ,40A ,1700V ,TO247-4

✖

The image is for reference only, please refer to the drawing for details

Company Profile：公司简介.pdf

Data Sheet： JX4S0070R170M.pdf

Product number：	MOS-MM143N242W40A17221JX
Manufacturer Product Number：	JX4S0070R170M
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	242W
Continuous Drain Current (ID) ：	40A
Drain-Source Voltage (V) ：	1700V
Package ：	TO247-4
Description：	MOS ,JX4S0070R170M ,N-ch ,242W ,40A ,1700V ,TO247-4

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Company Profile	公司简介.pdf
Data Sheet	JX4S0070R170M.pdf

Lead time： Estimated delivery date 2026-09-07

Quantity

Unit Price

1

$18.276923

10

$14.926154

50

$12.184615

Quantity

Unit Price

200

$10.661538

1000

$8.833846

* Order quantity ：

MPQ：1800

MOQ： 1800

MOQ：1

When the purchase quantity is less than the inventory, you can purchase directly, the purchase quantity is: N * MOQ
When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

Order quantity

Unit Price

Count

{{product.num}}

{{ isCn?'￥':'$'}}{{ isCn?product.price:product.usdPrice}}

{{isCn?'￥':'$'}}{{ isCn?product.subTotal:product.usdSubTotal}}

{{isCn?'￥':'$'}}{{ isCn?product.subTotal:product.usdSubTotal}}

Lead time： {{ (product.stock > 0 && product.num <= product.stock) ? 'In stock': 'Estimated delivery date ' + product.leadDate }}

Add to cart Buy it now

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Introduction to Power MOSFETs for Motor Drive Applications The application of motor drive is quite extensive, among which power MOSFET plays an important role. Anson Mei has a diverse range of power MOSFET product lines, among which NTBLS1D5N10MC unipolar, N-channel power MOSFET can meet the stringent requirements of related applications and is one of the best choices for motor drive control.

What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

High power thyristor 4H SiC GTO 4H SiC GTO thyristor is a promising high-power device with broad application prospects in the field of high-power power supplies. With the continuous improvement of technology and the increase of market demand, 4H SiC GTO thyristors will be widely used.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}