JX7S0150R330T3_JX_MOSFETS_N-ch_357W_Parameters_ Price_ Spot inventory_ Series Category

JX7S0150R330T3,JX,MOSFETS

Attribute Name	Attribute Value
Manufacturer	JX
Product Series	JX-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

Product Series

JX-MOS

Product Type

MOSFETS

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Company Profile	公司简介.pdf

File Type

File Name

Company Profile

公司简介.pdf

Product Recommendation Maker Dynamics Applications

ROHM Silicon Carbide BM2SC12xFP2-LBZ Model TO263-7L Package 1700V BM2SC12xFP2-LBZ is an advanced AC/DC converter IC in the industry, which adopts an integrated package. It has built a 1700V withstand voltage SiC MOSFET and a control circuit optimized for its drive into a small surface mount package (TO263-7L). Mainly suitable for auxiliary power supply of industrial equipment such as general-purpose inverters, AC servos, commercial air conditioners, street lamps, etc. that require handling high power. In addition, it can ensure long-term stable supply, which is very suitable for industrial equipment applications. (ROHM ROHM)

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

What are the reasons for the gate threshold voltage of SiC MOSFET There may be several reasons for the different gate threshold voltages (Vth) of SiC MOSFETs, including:

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

The switching performance of SiC MOSFET is controlled by gate drive The switching performance of SiC MOSFET is controlled by gate drive. Voltage source gate drive (VSG) is the most widely used structure in MOSFETs due to its low cost and simplified structure.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

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Product number：	MOS-MM147N357W35A33223JX
Manufacturer Product Number：	JX7S0150R330T3
Manufacturer ：	JX
Series ：	JX-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	357W
Continuous Drain Current (ID) ：	35A
Drain-Source Voltage (V) ：	3300V
Package ：	TO263-7
Description：	MOS ,JX7S0150R330T3 ,N-ch ,357W ,35A ,3300V ,TO-263-7

JX7S0150R330T3,JX,MOSFETS

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