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2N7002AK,JD,MOSFETS

2N7002AK

MOS ,2N7002AK ,N-ch ,- ,0.3A ,60V ,ESD ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： SOT-23-MOS-2N7002AK-0.3A60V (1).pdf

Product number：	MOS-MM165N000NA3060VE01JD
Manufacturer Product Number：	2N7002AK
Manufacturer ：	JD
Series ：	JD-MOSFET
Product Type ：	MOSFETS
Configuration ：	N-ch
Continuous Drain Current (ID) ：	0.3A
Drain-Source Voltage (V) ：	60V
Package ：	SOT-23
Description：	MOS ,2N7002AK ,N-ch ,- ,0.3A ,60V ,ESD ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	JD
Product Series	JD-MOSFET
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	SOT-23-MOS-2N7002AK-0.3A60V (1).pdf

Lead time： Estimated delivery date 2026-03-15

Quantity

Unit Price

5

$0.030157

20

$0.022115

100

$0.019434

300

$0.015414

Quantity

Unit Price

1000

$0.012733

3000

$0.010722

* Order quantity ：

MPQ：3000

MOQ： 3000

MOQ：5

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Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

MOS transistor as a special driving circuit for switch transistor applications (commutation circuit) MOS transistor is a special driving circuit (commutation circuit) used as a switching transistor. Compared with ordinary transistor, MOS transistor has many advantages. However, when applied as a high-power switch transistor, due to the capacitive input characteristics of MOS transistor, the input terminal of MOS transistor is equivalent to a small capacitor. The input switch excitation signal is actually in the process of repeatedly charging and discharging this capacitor. During the charging and discharging process, the MOS transistor conducts and closes with a lag, which slows down the process of "on" and "off", which is not allowed by the switching element (increased power consumption, burning out the switch transistor).

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

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