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UT50P03G-SO8-R,UTC,MOSFETS

UT50P03G-SO8-R

MOS ,UT50P03G-SO8-R ,P-ch ,2W ,-12A ,-30V ,- ,SOP8

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The image is for reference only, please refer to the drawing for details

Data Sheet： TO-252.pdf

Product number：	MOS-MM170P2W00M47F30N13UT
Manufacturer Product Number：	UT50P03G-SO8-R
Manufacturer ：	UTC
Series ：	UTC-POWER MOSFET
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	2W
Continuous Drain Current (ID) ：	-12A
Drain-Source Voltage (V) ：	-30V
Package ：	SOP8
Description：	MOS ,UT50P03G-SO8-R ,P-ch ,2W ,-12A ,-30V ,- ,SOP8

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	UTC
Product Series	UTC-POWER MOSFET
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name
Data Sheet	TO-252.pdf

Lead time： Estimated delivery date 2026-05-13

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What are the reasons for the gate threshold voltage of SiC MOSFET There may be several reasons for the different gate threshold voltages (Vth) of SiC MOSFETs, including:

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What is MOS transistor? MOS transistor is an abbreviation for MOSFET. Introduction to MOS transistor The full English name of MOSFET is MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which refers to the insulated gate type of MOSFET. Therefore, MOS transistors are sometimes referred to as insulated gate field-effect transistors. In general electronic circuits, MOS transistors are commonly used in amplifier circuits or switch circuits.

1200V SiC MOSFET tested under short-circuit conditions Short circuit capability of 1200 V SiC MOSFET and overcurrent protection solution using ready-made driver IC. Several design considerations were discussed to ensure accurate measurements. The test results indicate that the short-circuit capability of SiC MOSFET is highly correlated with the drain voltage and gate voltage, but not sensitive to the shell temperature and switching speed. By reducing the gate drive voltage or reducing the bus voltage, a longer endurance time can be achieved, but these solutions will lower the performance of SiC MOSFETs.

Introduction to the Principle and Function of SiC Silicon Carbide MOSFET Silicon carbide MOSFET is a type of MOSFET manufactured based on silicon carbide material. Its structure mainly includes a silicon carbide substrate, an insulation layer, a gate electrode, a drain electrode, and a source electrode. In its working principle, when the voltage applied to the gate changes, the silicon carbide MOSFET can achieve control from the on state to the off state, realizing the function of power switching. Silicon carbide MOS recommendation: Junxin MOS

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

MOS transistor as a special driving circuit for switch transistor applications (commutation circuit) MOS transistor is a special driving circuit (commutation circuit) used as a switching transistor. Compared with ordinary transistor, MOS transistor has many advantages. However, when applied as a high-power switch transistor, due to the capacitive input characteristics of MOS transistor, the input terminal of MOS transistor is equivalent to a small capacitor. The input switch excitation signal is actually in the process of repeatedly charging and discharging this capacitor. During the charging and discharging process, the MOS transistor conducts and closes with a lag, which slows down the process of "on" and "off", which is not allowed by the switching element (increased power consumption, burning out the switch transistor).

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

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