HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

Precision resistor current diverter Alloy resistance walter ever ohms SMD fuse fuse

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

CJ4153,CJ,MOSFETS

CJ4153

MOS ,N-ch ,CJ4153 ,0.15W ,0.915A ,20V ,SOT-523

✖

The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0080W15M0720V02CJ
Manufacturer Product Number：	CJ4153
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	0.15W
Continuous Drain Current (ID) ：	0.915A
Drain-Source Voltage (V) ：	20V
Package ：	SOT-523
Description：	MOS ,N-ch ,CJ4153 ,0.15W ,0.915A ,20V ,SOT-523

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

File

File Type	File Name

Lead time： Estimated delivery date 2026-05-09

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Introduction to the Principle and Function of SiC Silicon Carbide MOSFET Silicon carbide MOSFET is a type of MOSFET manufactured based on silicon carbide material. Its structure mainly includes a silicon carbide substrate, an insulation layer, a gate electrode, a drain electrode, and a source electrode. In its working principle, when the voltage applied to the gate changes, the silicon carbide MOSFET can achieve control from the on state to the off state, realizing the function of power switching. Silicon carbide MOS recommendation: Junxin MOS

What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

Can digital signals pass through isolation chips Can digital signals pass through isolation chips? The answer is yes. Digital signals can be transmitted through isolation chips. Isolation chips are mainly used to isolate signals for the purpose of electrical isolation, ground isolation, or optical isolation. Isolation chips typically consist of two parts: isolation front-end and isolation back-end.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Introduction to Power MOSFETs for Motor Drive Applications The application of motor drive is quite extensive, among which power MOSFET plays an important role. Anson Mei has a diverse range of power MOSFET product lines, among which NTBLS1D5N10MC unipolar, N-channel power MOSFET can meet the stringent requirements of related applications and is one of the best choices for motor drive control.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}