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CJ2102,CJ,MOSFETS

CJ2102

MOS ,N-ch ,CJ2102 ,0.2W ,2.1A ,20V ,SOT-323

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0140W20M0920V06CJ
Manufacturer Product Number：	CJ2102
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	0.2W
Continuous Drain Current (ID) ：	2.1A
Drain-Source Voltage (V) ：	20V
Package ：	SOT-323
Description：	MOS ,N-ch ,CJ2102 ,0.2W ,2.1A ,20V ,SOT-323

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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Lead time： Estimated delivery date 2026-06-24

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Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

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Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

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