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CJ8810,CJ,MOSFETS

CJ8810

MOS ,N-ch ,CJ8810 ,0.3W ,7A ,20V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0200W30M1220V01CJ
Manufacturer Product Number：	CJ8810
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	0.3W
Continuous Drain Current (ID) ：	7A
Drain-Source Voltage (V) ：	20V
Package ：	SOT-23
Description：	MOS ,N-ch ,CJ8810 ,0.3W ,7A ,20V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

CJ8820

MOS ,N-ch ,CJ8820 ,0.3W ,7A ,20V ,SOT-23

$0.000000 More

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Lead time： Estimated delivery date 2026-03-31

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Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

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What is the reason why a discharge resistor must be set for MOS switch applications? What is the reason why a discharge resistor must be set for MOS switch applications?

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

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