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CJD04N60A,CJ,MOSFETS

CJD04N60A

MOS ,N-ch ,CJD04N60A ,1.25W ,4A ,600V ,TO-251-3L

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0661W25M2660011CJ
Manufacturer Product Number：	CJD04N60A
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	1.25W
Continuous Drain Current (ID) ：	4A
Drain-Source Voltage (V) ：	600V
Package ：	TO-251-3L
Description：	MOS ,N-ch ,CJD04N60A ,1.25W ,4A ,600V ,TO-251-3L

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

CJD04N60

MOS ,N-ch ,CJD04N60 ,1.25W ,4A ,600V ,TO-251-3L

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Lead time： Estimated delivery date 2026-08-09

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Silicon carbide (SiC) power devices need to be used in conjunction with pull-down resistors Silicon carbide (SiC) pull-down resistor usually refers to the resistor used in SiC power devices to control the closing speed of the device. In SiC power devices, due to their high-speed switching characteristics and high peak voltage, high peak currents are generated when the control device is turned off, which can cause equipment failure or electromagnetic interference. Therefore, in SiC power devices, it is necessary to reduce the peak current during the shutdown process by using pull-down resistors to protect the equipment and reduce electromagnetic interference.

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