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CJU04N65,CJ,MOSFETS

CJU04N65

MOS ,N-ch ,CJU04N65 ,1.25W ,4A ,650V ,TO-252-2L(4R)

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0771W25M2665014CJ
Manufacturer Product Number：	CJU04N65
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	1.25W
Continuous Drain Current (ID) ：	4A
Drain-Source Voltage (V) ：	650V
Package ：	TO-252-2L(4R)
Description：	MOS ,N-ch ,CJU04N65 ,1.25W ,4A ,650V ,TO-252-2L(4R)

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

CJU04N65A

MOS ,N-ch ,CJU04N65A ,1.25W ,4A ,650V ,TO-252-2L(4R)

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Lead time： Estimated delivery date 2026-07-20

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What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

Photovoltaic inverters need to convert the direct current generated by solar panels into alternating current and output it to power loads such as water pumps. Therefore, devices that can withstand high voltage, high frequency, and high temperature are required. SiC devices have these characteristics, so it is possible to use SiC devices in photovoltaic inverters, but the specific use needs to be comprehensively considered based on the actual situation.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

What is MOS transistor? MOS transistor is an abbreviation for MOSFET. Introduction to MOS transistor The full English name of MOSFET is MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which refers to the insulated gate type of MOSFET. Therefore, MOS transistors are sometimes referred to as insulated gate field-effect transistors. In general electronic circuits, MOS transistors are commonly used in amplifier circuits or switch circuits.

What are the differences in application scenarios between single FET and MOSFET transistors? Single FET and MOSFET have a wide range of application prospects in switch circuits and power amplifiers, and the specific choice should be determined according to the specific application scenario and requirements.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

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