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CJP02N65,CJ,MOSFETS

CJP02N65

MOS ,N-ch ,CJP02N65 ,2W ,2A ,650V ,TO-220-3L

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM0932W00M3465015CJ
Manufacturer Product Number：	CJP02N65
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	2W
Continuous Drain Current (ID) ：	2A
Drain-Source Voltage (V) ：	650V
Package ：	TO-220-3L
Description：	MOS ,N-ch ,CJP02N65 ,2W ,2A ,650V ,TO-220-3L

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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Lead time： Estimated delivery date 2026-06-20

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Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

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The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

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