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CJPF04N60,CJ,MOSFETS

CJPF04N60

MOS ,N-ch ,CJPF04N60 ,2W ,4A ,600V ,TO-220F

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM1082W00M2660017CJ
Manufacturer Product Number：	CJPF04N60
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	2W
Continuous Drain Current (ID) ：	4A
Drain-Source Voltage (V) ：	600V
Package ：	TO-220F
Description：	MOS ,N-ch ,CJPF04N60 ,2W ,4A ,600V ,TO-220F

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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File Type	File Name

Lead time： Estimated delivery date 2025-05-05

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Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

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