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IRF830,CJ,MOSFETS

IRF830

MOS ,N-ch ,IRF830 ,2W ,4.5A ,500V ,TO-220-3L

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MNM1222W00M3850015CJ
Manufacturer Product Number：	IRF830
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	N-ch
Power Dissipation (PD) ：	2W
Continuous Drain Current (ID) ：	4.5A
Drain-Source Voltage (V) ：	500V
Package ：	TO-220-3L
Description：	MOS ,N-ch ,IRF830 ,2W ,4.5A ,500V ,TO-220-3L

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Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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Lead time： Estimated delivery date 2024-12-24

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Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

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