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CJ2301,CJ,MOSFETS

CJ2301

MOS ,P-ch ,CJ2301 ,0.35W ,-2.3A ,-20V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MPM0300W35M18F2001CJ
Manufacturer Product Number：	CJ2301
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	-2.3A
Drain-Source Voltage (V) ：	-20V
Package ：	SOT-23
Description：	MOS ,P-ch ,CJ2301 ,0.35W ,-2.3A ,-20V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

CJ2301S

MOS ,P-ch ,CJ2301S ,0.35W ,-2.3A ,-20V ,SOT-23

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Lead time： Estimated delivery date 2026-06-20

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Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

Voltage polarity and symbol diagram of MOS transistor, N-MOS and P-MOS The following text introduces the symbol rules for N-MOS voltage polarity and P-MOS voltage polarity respectively

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

ROHM Silicon Carbide BM2SC12xFP2-LBZ Model TO263-7L Package 1700V BM2SC12xFP2-LBZ is an advanced AC/DC converter IC in the industry, which adopts an integrated package. It has built a 1700V withstand voltage SiC MOSFET and a control circuit optimized for its drive into a small surface mount package (TO263-7L). Mainly suitable for auxiliary power supply of industrial equipment such as general-purpose inverters, AC servos, commercial air conditioners, street lamps, etc. that require handling high power. In addition, it can ensure long-term stable supply, which is very suitable for industrial equipment applications. (ROHM ROHM)

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

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