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CJ2305,CJ,MOSFETS

CJ2305

MOS ,P-ch ,CJ2305 ,0.35W ,-4.1A ,-8V ,SOT-23

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The image is for reference only, please refer to the drawing for details

Product number：	MOS-MPM0360W35M14F8V01CJ
Manufacturer Product Number：	CJ2305
Manufacturer ：	CJ
Series ：	CJ-MOS
Product Type ：	MOSFETS
Configuration ：	P-ch
Power Dissipation (PD) ：	0.35W
Continuous Drain Current (ID) ：	-4.1A
Drain-Source Voltage (V) ：	-8V
Package ：	SOT-23
Description：	MOS ,P-ch ,CJ2305 ,0.35W ,-4.1A ,-8V ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-MOS
Product Type	MOSFETS
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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Lead time： Estimated delivery date when out of stock 2026-09-13

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Product Recommendation Maker Dynamics Applications

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Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

1200V SiC MOSFET tested under short-circuit conditions Short circuit capability of 1200 V SiC MOSFET and overcurrent protection solution using ready-made driver IC. Several design considerations were discussed to ensure accurate measurements. The test results indicate that the short-circuit capability of SiC MOSFET is highly correlated with the drain voltage and gate voltage, but not sensitive to the shell temperature and switching speed. By reducing the gate drive voltage or reducing the bus voltage, a longer endurance time can be achieved, but these solutions will lower the performance of SiC MOSFETs.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Photovoltaic inverters need to convert the direct current generated by solar panels into alternating current and output it to power loads such as water pumps. Therefore, devices that can withstand high voltage, high frequency, and high temperature are required. SiC devices have these characteristics, so it is possible to use SiC devices in photovoltaic inverters, but the specific use needs to be comprehensively considered based on the actual situation.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

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