UC3844G-SO8-R_UTC_PWM Controller_30V_1A_Parameters_ Price_ Spot inventory_ Series Category

Attribute Name	Attribute Value
Manufacturer	UTC
Product Series	UTC-UC3844/45
Product Type	PWM Controller
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Attribute Name

Attribute Value

Manufacturer

UTC

Product Series

UTC-UC3844/45

Product Type

PWM Controller

EU RoHS

Compliant(2011/65/EU)

EU REACH

Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	UC3844.pdf

File Type

File Name

Data Sheet

UC3844.pdf

Lead time： Estimated delivery date when out of stock 2025-05-02

Quantity

Unit Price

$0.413058

$0.330447

100

$0.276749

300

$0.231313

Quantity

Unit Price

1000

$0.148701

5000

$0.119787

Online Inquiry

* Order quantity ：

MPQ：2500

MOQ：1

Product Recommendation Maker Dynamics Applications

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Will Cascode SiC be faster than regular SiC? The Cascode SiC (silicon carbide common source common gate) structure may have faster switching speeds than ordinary SiC devices in some cases. The Cascode structure combines the characteristics of Si (silicon) MOSFET and SiC devices, and through optimized design and driving methods, it is possible to achieve lower on resistance, faster switching conversion, and lower switching losses.

What are the design issues of inverters during the transition from silicon to silicon carbide (SiC)? The design of silicon carbide device inverters is a complex process that requires consideration of many factors to ensure their reliability and performance. Therefore, designers need to fully understand the characteristics of silicon carbide devices and make corresponding adjustments during design to ensure that the inverter can meet the requirements of the application environment

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Product number：	PMW-UC38440301A0002SO803
Manufacturer Product Number：	UC3844G-SO8-R
Manufacturer ：	UTC
Series ：	UTC-UC3844/45
Product Type ：	PWM Controller
Supply Voltage ：	30V
Output Current ：	1A
Power Dissipation ：	0.8W
Package ：	SOP8
Description：	UC3844 ,30V ,1A ,0.8W ,SOP8

UC3844G-SO8-R,UTC,PWM Controller

UC3844G-SO8-R

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

UC3844G-SO8-R,UTC,PWM Controller

UC3844G-SO8-R

File

Related Series