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DTC143EUA,CJ,Digital Transistors

DTC143EUA

Digital Transistors ,DTC143EUA ,NPN ,200mW ,100mA ,50V ,20 ,SOT-323

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The image is for reference only, please refer to the drawing for details

Data Sheet： DTC143EUA_SOT-323

Product number：	QD-DD002N31A102CJ
Manufacturer Product Number：	DTC143EUA
Manufacturer ：	CJ
Series ：	CJ-Digital Transistors
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-323
Description：	Digital Transistors ,DTC143EUA ,NPN ,200mW ,100mA ,50V ,20 ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-Digital Transistors
Product Type	Digital Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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File Type	File Name
Data Sheet	DTC143EUA_SOT-323

Lead time： Estimated delivery date when out of stock 2026-06-15

Quantity

Unit Price

5

$0.031926

20

$0.026909

100

$0.021436

300

$0.018700

Quantity

Unit Price

1000

$0.015963

3000

$0.014139

12000

$0.012770

* Order quantity ：

MPQ：3000

MOQ： 3000

MOQ：5

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When the purchase quantity is greater than the inventory, you need to order; when ordering, the purchase quantity is: N * MPQ

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Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

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Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

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