HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

ever ohms current diverter fuse Alloy resistance walter Precision resistor SMD fuse

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTA114ECA,CJ,Digital Transistors

DTA114ECA

Digital Transistors ,DTA114ECA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD009P31A301CJ
Manufacturer Product Number：	DTA114ECA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23
Description：	Digital Transistors ,DTA114ECA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTA113ZCA

Digital Transistors ,DTA113ZCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA143ECA

Digital Transistors ,DTA143ECA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTA114YCA

Digital Transistors ,DTA114YCA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-23

$0.000000 More
DTA115TCA

Digital Transistors ,DTA115TCA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTA124ECA

Digital Transistors ,DTA124ECA ,PNP ,200mW ,100mA ,50V ,56 ,SOT-23

$0.000000 More
DTA123YCA

Digital Transistors ,DTA123YCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA143TCA

Digital Transistors ,DTA143TCA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTA143XCA

Digital Transistors ,DTA143XCA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTA143ZCA

Digital Transistors ,DTA143ZCA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-23

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-05-24

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}