HNST WELCOME！ 0755-23173910

English /中文

Search

ever ohms Precision resistor SMD fuse walter current diverter fuse Alloy resistance

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTA123YCA,CJ,Digital Transistors

DTA123YCA

Digital Transistors ,DTA123YCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD035P31A401CJ
Manufacturer Product Number：	DTA123YCA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23
Description：	Digital Transistors ,DTA123YCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-14

Product Recommendation Maker Dynamics Applications

DTA114TCA

Digital Transistors ,DTA114TCA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTC114WUA

Digital Transistors ,DTC114WUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTC143TE

Digital Transistors ,DTC143TE ,NPN ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
TSC144ENND03

Digital Transistors ,TSC144ENND03 ,NPN ,150mW ,100mA ,50V ,68 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTA114EUA

Digital Transistors ,DTA114EUA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTA144TE

Digital Transistors ,DTA144TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTC114TE

Digital Transistors ,DTC114TE ,NPN ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More

Product Recommendation Maker Dynamics Applications

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Product Recommendation Maker Dynamics Applications