HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

Alloy resistance ever ohms walter fuse current diverter SMD fuse Precision resistor

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTA123YSA,CJ,Digital Transistors

DTA123YSA

Digital Transistors ,DTA123YSA ,PNP ,300mW ,100mA ,50V ,33 ,TO-92S

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD038P41A408CJ
Manufacturer Product Number：	DTA123YSA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	300MW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	TO-92S
Description：	Digital Transistors ,DTA123YSA ,PNP ,300mW ,100mA ,50V ,33 ,TO-92S

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTA113ZSA

Digital Transistors ,DTA113ZSA ,PNP ,300mW ,100mA ,50V ,33 ,TO-92S

$0.000000 More
DTA114ESA

Digital Transistors ,DTA114ESA ,PNP ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More
DTA114TSA

Digital Transistors ,DTA114TSA ,PNP ,300mW ,100mA ,50V ,100 ,TO-92S

$0.000000 More
DTA114YSA

Digital Transistors ,DTA114YSA ,PNP ,300mW ,100mA ,50V ,68 ,TO-92S

$0.000000 More
DTA123JSA

Digital Transistors ,DTA123JSA ,P*P ,300mW ,100mA ,50V ,80 ,TO-92S

$0.000000 More
DTA124ESA

Digital Transistors ,DTA124ESA ,PNP ,300mW ,100mA ,50V ,56 ,TO-92S

$0.000000 More
DTA143ESA

Digital Transistors ,DTA143ESA ,PNP ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More
DTA143TSA

Digital Transistors ,DTA143TSA ,PNP ,300mW ,100mA ,50V ,100 ,TO-92S

$0.000000 More
DTA143XSA

Digital Transistors ,DTA143XSA ,PNP ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-09-09

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}