HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

ever ohms walter SMD fuse fuse current diverter Alloy resistance Precision resistor

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTA123YUA,CJ,Digital Transistors

DTA123YUA

Digital Transistors ,DTA123YUA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-323

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD039P31A402CJ
Manufacturer Product Number：	DTA123YUA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-323
Description：	Digital Transistors ,DTA123YUA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTA113ZUA

Digital Transistors ,DTA113ZUA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-323

$0.000000 More
DTA143ZUA

Digital Transistors ,DTA143ZUA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
DTA114YUA

Digital Transistors ,DTA114YUA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-323

$0.000000 More
DTA115TUA

Digital Transistors ,DTA115TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTA114TUA

Digital Transistors ,DTA114TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTA124EUA

Digital Transistors ,DTA124EUA ,PNP ,200mW ,100mA ,50V ,56 ,SOT-323

$0.000000 More
DTA143EUA

Digital Transistors ,DTA143EUA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTA144TUA

Digital Transistors ,DTA144TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTA114EUA

Digital Transistors ,DTA114EUA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTA144EUA

Digital Transistors ,DTA144EUA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-323

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-06-29

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}