DTA143XKA_CJ_Digital Transistors_PNP_200mW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-10-09

Online Inquiry

Product Recommendation Maker Dynamics Applications

DTA113ZCA

Digital Transistors ,DTA113ZCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA123JKA

Digital Transistors ,DTA123JKA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-23-3L

$0.000000 More
DTC113ZUA

Digital Transistors ,DTC113ZUA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-323

$0.000000 More
DTC123YSA

Digital Transistors ,DTC123YSA ,NPN ,300mW ,100mA ,50V ,33 ,TO-92S

$0.000000 More
TSA143ENND03

Digital Transistors ,TSA143ENND03 ,PNP ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTC123JE

Digital Transistors ,DTC123JE ,NPN ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTA143XCA

Digital Transistors ,DTA143XCA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTA123YCA

Digital Transistors ,DTA123YCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA144EKA

Digital Transistors ,DTA144EKA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-23-3L

$0.000000 More
DTC144ECA

Digital Transistors ,DTC144ECA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-23

$0.000000 More
DTC144TKA

Digital Transistors ,DTC144TKA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
DTA143XUA

Digital Transistors ,DTA143XUA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTA143TM

Digital Transistors ,DTA143TM ,PNP ,100mW ,100mA ,50V ,100 ,SOT-723

$0.000000 More
DTC143ZSA

Digital Transistors ,DTC143ZSA ,NPN ,300mW ,100mA ,50V ,80 ,TO-92S

$0.000000 More
DTC123JKA

Digital Transistors ,DTC123JKA ,N*P ,100mW ,100mA ,50V ,80 ,SOT-23-3L

$0.000000 More
DTA115TUA

Digital Transistors ,DTA115TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTC114YUA

Digital Transistors ,DTC114YUA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-323

$0.000000 More
DTC143ZUA

Digital Transistors ,DTC143ZUA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
DTC124ECA

Digital Transistors ,DTC124ECA ,NPN ,200mW ,100mA ,50V ,56 ,SOT-23

$0.000000 More
DTC124ESA

Digital Transistors ,DTC124ESA ,NPN ,300mW ,100mA ,50V ,56 ,TO-92S

$0.000000 More

Product Recommendation Maker Dynamics Applications

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Product number：	QD-DD060P31A326CJ
Manufacturer Product Number：	DTA143XKA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	PNP
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23-3L
Description：	Digital Transistors ,DTA143XKA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23-3L

DTA143XKA,CJ,Digital Transistors

DTA143XKA

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

DTA143XKA,CJ,Digital Transistors

DTA143XKA

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications