HNST WELCOME！ 0755-23173910

English /中文

Search

ever ohms current diverter fuse Alloy resistance SMD fuse Precision resistor walter

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTC113ZCA,CJ,Digital Transistors

DTC113ZCA

Digital Transistors ,DTC113ZCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD083N31A401CJ
Manufacturer Product Number：	DTC113ZCA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-23
Description：	Digital Transistors ,DTC113ZCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-13

Product Recommendation Maker Dynamics Applications

DTA123YM

Digital Transistors ,DTA123YM ,PNP ,100mW ,100mA ,50V ,33 ,SOT-723

$0.000000 More
DTA113ZUA

Digital Transistors ,DTA113ZUA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-323

$0.000000 More
DTC123JSA

Digital Transistors ,DTC123JSA ,NPN ,300mW ,100mA ,50V ,80 ,TO-92S

$0.000000 More
TSA143TNND03

Digital Transistors ,TSA143TNND03 ,PNP ,150mW ,100mA ,50V ,100 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTC124EE

Digital Transistors ,DTC124EE ,NPN ,150mW ,100mA ,50V ,56 ,SOT-523

$0.000000 More
DTA143EKA

Digital Transistors ,DTA143EKA ,PNP ,150mW ,100mA ,50V ,30 ,SOT-23-3L

$0.000000 More
DTC114EE

Digital Transistors ,DTC114EE ,NPN ,150mW ,100mA ,50V ,30 ,SOT-523

$0.000000 More

Product Recommendation Maker Dynamics Applications

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product Recommendation Maker Dynamics Applications