HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

current diverter fuse SMD fuse ever ohms walter Precision resistor Alloy resistance

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

DTC114WUA,CJ,Digital Transistors

DTC114WUA

Digital Transistors ,DTC114WUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD105N31AA02CJ
Manufacturer Product Number：	DTC114WUA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-323
Description：	Digital Transistors ,DTC114WUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

DTC143EUA

Digital Transistors ,DTC143EUA ,NPN ,200mW ,100mA ,50V ,20 ,SOT-323

$0.012770 More
DTC113ZUA

Digital Transistors ,DTC113ZUA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-323

$0.000000 More
DTC114EUA

Digital Transistors ,DTC114EUA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTC114TUA

Digital Transistors ,DTC114TUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTC114YUA

Digital Transistors ,DTC114YUA ,NPN ,200mW ,100mA ,50V ,68 ,SOT-323

$0.000000 More
DTC123JUA

Digital Transistors ,DTC123JUA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
DTC123YUA

Digital Transistors ,DTC123YUA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-323

$0.000000 More
DTC124EUA

Digital Transistors ,DTC124EUA ,NPN ,200mW ,100mA ,50V ,56 ,SOT-323

$0.000000 More
DTC143TUA

Digital Transistors ,DTC143TUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More

File

File Type	File Name

Lead time： Estimated delivery date 2026-08-04

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}