DTC114WUA_CJ_Digital Transistors_NPN_200mW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-05-24

Online Inquiry

Product Recommendation Maker Dynamics Applications

DTC113ZCA

Digital Transistors ,DTC113ZCA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23

$0.000000 More
DTA114EM

Digital Transistors ,DTA114EM ,PNP ,100mW ,100mA ,50V ,30 ,SOT-723

$0.000000 More
DTC143EM

Digital Transistors ,DTC143EM ,NPN ,100mW ,100mA ,50V ,20 ,SOT-723

$0.000000 More
DTA143XE

Digital Transistors ,DTA143XE ,PNP ,150mW ,100mA ,50V ,30 ,SOT-523

$0.000000 More
DTA143XCA

Digital Transistors ,DTA143XCA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTA114EKA

Digital Transistors ,DTA114EKA ,PNP ,200mW ,100mA ,50V ,30 ,SOT-23-3L

$0.000000 More
DTC114EUA

Digital Transistors ,DTC114EUA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTA115TUA

Digital Transistors ,DTA115TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTC113ZKA

Digital Transistors ,DTC113ZKA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-23-3L

$0.000000 More
DTC143ZUA

Digital Transistors ,DTC143ZUA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
TSA143ENND03

Digital Transistors ,TSA143ENND03 ,PNP ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTA124EE

Digital Transistors ,DTA124EE ,PNP ,150mW ,100mA ,50V ,56 ,SOT-523

$0.000000 More
DTC123JM

Digital Transistors ,DTC123JM ,NPN ,100mW ,100mA ,50V ,80 ,SOT-723

$0.000000 More
DTC114WCA

Digital Transistors ,DTC114WCA ,NPN ,200mW ,100mA ,50V ,24 ,SOT-23

$0.000000 More
DTC114TUA

Digital Transistors ,DTC114TUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTA114EE

Digital Transistors ,DTA114EE ,PNP ,150mW ,100mA ,50V ,30 ,SOT-523

$0.000000 More
DTA143ZKA

Digital Transistors ,DTA143ZKA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-23-3L

$0.000000 More
DTA114TUA

Digital Transistors ,DTA114TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTA113ZM

Digital Transistors ,DTA113ZM ,PNP ,100mW ,100mA ,50V ,33 ,SOT-723

$0.000000 More
DTC123JUA

Digital Transistors ,DTC123JUA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Product number：	QD-DD105N31AA02CJ
Manufacturer Product Number：	DTC114WUA
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	200mW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-323
Description：	Digital Transistors ,DTC114WUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

DTC114WUA,CJ,Digital Transistors

DTC114WUA

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

DTC114WUA,CJ,Digital Transistors

DTC114WUA

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications