DTC143XM_CJ_Digital Transistors_NPN_100MW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-03-26

Online Inquiry

Product Recommendation Maker Dynamics Applications

DTA114TE

Digital Transistors ,DTA114TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTD123YUA

Digital Transistors ,DTD123YUA ,NPN ,200mW ,500mA ,50V ,56 ,SOT-323

$0.000000 More
DTC114WM

Digital Transistors ,DTC114WM ,PNP ,100mW ,100mA ,50V ,24 ,SOT-723

$0.000000 More
DTA143ZCA

Digital Transistors ,DTA143ZCA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-23

$0.000000 More
DTA144TE

Digital Transistors ,DTA144TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTA144EE

Digital Transistors ,DTA144EE ,PNP ,150mW ,100mA ,50V ,68 ,SOT-523

$0.000000 More
DTC144TKA

Digital Transistors ,DTC144TKA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
DTA143ZUA

Digital Transistors ,DTA143ZUA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
TSC114ENND03

Digital Transistors ,TSC114ENND03 ,NPN ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTC114YE

Digital Transistors ,DTC114YE ,NPN ,150mW ,100mA ,50V ,68 ,SOT-523

$0.000000 More
DTA123JSA

Digital Transistors ,DTA123JSA ,P*P ,300mW ,100mA ,50V ,80 ,TO-92S

$0.000000 More
DTC143XUA

Digital Transistors ,DTC143XUA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-323

$0.000000 More
DTC124EM

Digital Transistors ,DTC124EM ,NPN ,100mW ,100mA ,50V ,56 ,SOT-723

$0.000000 More
DTA143XM

Digital Transistors ,DTA143XM ,PNP ,100mW ,100mA ,50V ,30 ,SOT-723

$0.000000 More
DTA143TE

Digital Transistors ,DTA143TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTC123YUA

Digital Transistors ,DTC123YUA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-323

$0.000000 More
DTC123JUA

Digital Transistors ,DTC123JUA ,NPN ,200mW ,100mA ,50V ,80 ,SOT-323

$0.000000 More
DTC143TSA

Digital Transistors ,DTC143TSA ,NPN ,300mW ,100mA ,50V ,100 ,TO-92S

$0.000000 More
DTA143TUA

Digital Transistors ,DTA143TUA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More
DTC144TUA

Digital Transistors ,DTC144TUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

$0.000000 More

Product Recommendation Maker Dynamics Applications

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Product number：	QD-DD147N11A304CJ
Manufacturer Product Number：	DTC143XM
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	100MW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	SOT-723
Description：	Digital Transistors ,DTC143XM ,NPN ,100mW ,100mA ,50V ,30 ,SOT-723

DTC143XM,CJ,Digital Transistors

DTC143XM

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

DTC143XM,CJ,Digital Transistors

DTC143XM

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications