TSA143ENND03_CJ_Digital Transistors_NPN_150MW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-04-09

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DTA114YSA

Digital Transistors ,DTA114YSA ,PNP ,300mW ,100mA ,50V ,68 ,TO-92S

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DTA144TE

Digital Transistors ,DTA144TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

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DTA144ESA

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Digital Transistors ,DTA143ZCA ,PNP ,200mW ,100mA ,50V ,80 ,SOT-23

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DTC124ECA

Digital Transistors ,DTC124ECA ,NPN ,200mW ,100mA ,50V ,56 ,SOT-23

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Digital Transistors ,DTC124EUA ,NPN ,200mW ,100mA ,50V ,56 ,SOT-323

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DTC113ZSA

Digital Transistors ,DTC113ZSA ,NPN ,300mW ,100mA ,50V ,33 ,TO-92S

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DTA123YCA

Digital Transistors ,DTA123YCA ,PNP ,200mW ,100mA ,50V ,33 ,SOT-23

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DTC114TUA

Digital Transistors ,DTC114TUA ,NPN ,200mW ,100mA ,50V ,100 ,SOT-323

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DTC143ZM

Digital Transistors ,DTC143ZM ,NPN ,100mW ,100mA ,50V ,80 ,SOT-723

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DTA143EUA

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DTC143ZE

Digital Transistors ,DTC143ZE ,NPN ,150mW ,100mA ,50V ,80 ,SOT-523

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DTC113ZUA

Digital Transistors ,DTC113ZUA ,NPN ,200mW ,100mA ,50V ,33 ,SOT-323

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DTA115TUA

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DTC143XM

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DTC144TM

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DTC144TUA

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TSC114TNND03

Digital Transistors ,TSC114TNND03 ,NPN ,150mW ,100mA ,50V ,100 ,WBFBP-03B(1.2×1.2×0.5)

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DTC144TE

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SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Product number：	QD-DD173P21A324CJ
Manufacturer Product Number：	TSA143ENND03
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	150MW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	WBFBP-03B(1.2×1.2×0.5)
Description：	Digital Transistors ,TSA143ENND03 ,PNP ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

TSA143ENND03,CJ,Digital Transistors

TSA143ENND03

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TSA143ENND03,CJ,Digital Transistors

TSA143ENND03

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