HNST WELCOME！ 0755-23173910

English /中文

Search

fuse current diverter SMD fuse ever ohms walter Alloy resistance Precision resistor

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

TSC114ENND03,CJ,Digital Transistors

TSC114ENND03

Digital Transistors ,TSC114ENND03 ,NPN ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

✖

The image is for reference only, please refer to the drawing for details

Product number：	QD-DD176N21A324CJ
Manufacturer Product Number：	TSC114ENND03
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	150MW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	WBFBP-03B(1.2×1.2×0.5)
Description：	Digital Transistors ,TSC114ENND03 ,NPN ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-14

Product Recommendation Maker Dynamics Applications

DTA124EKA

Digital Transistors ,DTA124EKA ,PNP ,200mW ,100mA ,50V ,56 ,SOT-23-3L

$0.000000 More
DTA123JE

Digital Transistors ,DTA123JE ,PNP ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTA144TE

Digital Transistors ,DTA144TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTA114YUA

Digital Transistors ,DTA114YUA ,PNP ,200mW ,100mA ,50V ,68 ,SOT-323

$0.000000 More
DTC143ESA

Digital Transistors ,DTC143ESA ,NPN ,300mW ,100mA ,50V ,20 ,TO-92S

$0.000000 More
DTA114TKA

Digital Transistors ,DTA114TKA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23-3L

$0.000000 More
TSA143ENND03

Digital Transistors ,TSA143ENND03 ,PNP ,150mW ,100mA ,50V ,30 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More

Product Recommendation Maker Dynamics Applications

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Product Recommendation Maker Dynamics Applications