TSC144ENND03_CJ_Digital Transistors_NPN_150MW_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-05-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

DTC123YM

Digital Transistors ,DTC123YM ,NPN ,100mW ,100mA ,50V ,33 ,SOT-723

$0.000000 More
TSA143TNND03

Digital Transistors ,TSA143TNND03 ,PNP ,150mW ,100mA ,50V ,100 ,WBFBP-03B(1.2×1.2×0.5)

$0.000000 More
DTA123YE

Digital Transistors ,DTA123YE ,PNP ,150mW ,100mA ,50V ,33 ,SOT-523

$0.000000 More
DTC123JKA

Digital Transistors ,DTC123JKA ,N*P ,100mW ,100mA ,50V ,80 ,SOT-23-3L

$0.000000 More
DTC143ZE

Digital Transistors ,DTC143ZE ,NPN ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTA143ESA

Digital Transistors ,DTA143ESA ,PNP ,300mW ,100mA ,50V ,30 ,TO-92S

$0.000000 More
DTA114YE

Digital Transistors ,DTA114YE ,PNP ,150mW ,100mA ,50V ,68 ,SOT-523

$0.000000 More
DTC143TSA

Digital Transistors ,DTC143TSA ,NPN ,300mW ,100mA ,50V ,100 ,TO-92S

$0.000000 More
DTC143EM

Digital Transistors ,DTC143EM ,NPN ,100mW ,100mA ,50V ,20 ,SOT-723

$0.000000 More
DTA144ESA

Digital Transistors ,DTA144ESA ,PNP ,300mW ,100mA ,50V ,68 ,TO-92S

$0.000000 More
DTA124ESA

Digital Transistors ,DTA124ESA ,PNP ,300mW ,100mA ,50V ,56 ,TO-92S

$0.000000 More
DTC114ECA

Digital Transistors ,DTC114ECA ,NPN ,200mW ,100mA ,50V ,30 ,SOT-23

$0.000000 More
DTA144TM

Digital Transistors ,DTA144TM ,PNP ,100mW ,100mA ,50V ,100 ,SOT-723

$0.000000 More
DTA143ZE

Digital Transistors ,DTA143ZE ,PNP ,150mW ,100mA ,50V ,80 ,SOT-523

$0.000000 More
DTA115TCA

Digital Transistors ,DTA115TCA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTA114TE

Digital Transistors ,DTA114TE ,PNP ,150mW ,100mA ,50V ,100 ,SOT-523

$0.000000 More
DTA144TCA

Digital Transistors ,DTA144TCA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTA114TCA

Digital Transistors ,DTA114TCA ,PNP ,200mW ,100mA ,50V ,100 ,SOT-23

$0.000000 More
DTC143EKA

Digital Transistors ,DTC143EKA ,NPN ,200mW ,100mA ,50V ,20 ,SOT-23-3L

$0.000000 More
DTA124ECA

Digital Transistors ,DTA124ECA ,PNP ,200mW ,100mA ,50V ,56 ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Product number：	QD-DD183N21A624CJ
Manufacturer Product Number：	TSC144ENND03
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Digital Transistors
Polarity ：	NPN
Power Dissipation(PD) ：	150MW
Output Current (mA) ：	100mA
Supply Voltage (V）：	50V
Package ：	WBFBP-03B(1.2×1.2×0.5)
Description：	Digital Transistors ,TSC144ENND03 ,NPN ,150mW ,100mA ,50V ,68 ,WBFBP-03B(1.2×1.2×0.5)

TSC144ENND03,CJ,Digital Transistors

TSC144ENND03

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

TSC144ENND03,CJ,Digital Transistors

TSC144ENND03

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications