HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

current diverter Alloy resistance SMD fuse fuse ever ohms walter Precision resistor

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

2SA1037,CJ,Bipolar Transistors

2SA1037

Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FQ

✖

The image is for reference only, please refer to the drawing for details

Data Sheet： 2SA1037_SOT-23.pdf

Product number：	QT-TQT027P50VC02061101CJ
Manufacturer Product Number：	2SA1037
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FQ

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

A733

Bipolar Transistors ,A733 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23

$0.000000 More
2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M6

$0.000000 More
2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M5

$0.000000 More
2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M7

$0.000000 More
2SA1235A

Bipolar Transistors ,2SA1235A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,200mA ,SOT-23,M.E

$0.000000 More
2SA1235A

Bipolar Transistors ,2SA1235A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,200mA ,SOT-23,M.F

$0.000000 More
2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M4

$0.000000 More

File

File Type	File Name
Data Sheet	2SA1037_SOT-23.pdf

Lead time： Estimated delivery date 2026-06-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}