2SA1037_CJ_Bipolar Transistors_PNP_50V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SA1037_SOT-23.pdf

Lead time： Estimated delivery date 2026-08-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

2SD602

Bipolar Transistors ,2SD602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WR1

$0.000000 More
2SA1832

Bipolar Transistors ,2SA1832 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-523,SY

$0.000000 More
KTC3875

Bipolar Transistors ,KTC3875 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,ALO

$0.000000 More
S9018W

Bipolar Transistors ,S9018W ,NPN ,VCEO:15V ,VCBO: 30V ,200mW ,50mA ,SOT-323

$0.000000 More
PZTA44

Bipolar Transistors ,PZTA44 ,NPN ,VCEO:400V ,VCBO: 500V ,1000mW ,200mA ,SOT-223

$0.000000 More
2SC4215

Bipolar Transistors ,2SC4215 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-323,QY

$0.000000 More
MMBT4403

Bipolar Transistors ,MMBT4403 ,PNP ,VCEO:40V ,VCBO: 40V ,300mW ,600mA ,SOT-23

$0.000000 More
2SC5658

Bipolar Transistors ,2SC5658 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-723,FR

$0.000000 More
S9014

Bipolar Transistors ,S9014 ,NPN ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23

$0.007228 More
BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3F

$0.000000 More
BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6F

$0.000000 More
2SC4177

Bipolar Transistors ,2SC4177 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,L4

$0.000000 More
S9014W

Bipolar Transistors ,S9014W ,NPN ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-323

$0.000000 More
PZT3906

Bipolar Transistors ,PZT3906 ,PNP ,VCEO:40V ,VCBO: 40V ,1000mW ,200mA ,SOT-223

$0.000000 More
BC817

Bipolar Transistors ,BC817 ,NPN ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-23,6A

$0.000000 More
2SA1774

Bipolar Transistors ,2SA1774 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-523,FR

$0.000000 More
BC847T

Bipolar Transistors ,BC847T ,NPN ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,1F

$0.000000 More
2SB1218A

Bipolar Transistors ,2SB1218A ,PNP ,VCEO:45V ,VCBO: 45V ,150mW ,100mA ,SOT-323,BR1

$0.000000 More
BCP51

Bipolar Transistors ,BCP51 ,PNP ,VCEO:45V ,VCBO: 45V ,1500mW ,1000mA ,SOT-223,10

$0.000000 More
2SC4618

Bipolar Transistors ,2SC4618 ,NPN ,VCEO:25V ,VCBO: 40V ,150mW ,50mA ,SOT-523,AQ

$0.000000 More

Product Recommendation Maker Dynamics Applications

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

The Development Trend of High Voltage SiC MOSFET The research on high-voltage SiC MOSFETs is gradually deepening, mainly focusing on the design, preparation, and detection of high-voltage SiC MOSFETs. In the past two years, Sic Mosfet has broken through the peak tunneling voltage of 2600V, with crystal surface insulation characteristics as high as 200MV • cm-1, and static performance reaching 500A/1700V for a single chip in a half bridge topology. It can also support constant current and constant voltage regulator operation. In addition, there are SiC Mosfets designed for solid-state dye solar energy to meet the needs of these applications.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Product number：	QT-TQT027P50VC02061101CJR
Manufacturer Product Number：	2SA1037
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FR

2SA1037,CJ,Bipolar Transistors

2SA1037

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SA1037,CJ,Bipolar Transistors

2SA1037

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications