2SA2018_CJ_Bipolar Transistors_PNP_12V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SA2018_SOT-523

Lead time： Estimated delivery date 2026-05-05

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KTA2014

Bipolar Transistors ,KTA2014 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-323,SY

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PZTA44

Bipolar Transistors ,PZTA44 ,NPN ,VCEO:400V ,VCBO: 500V ,1000mW ,200mA ,SOT-223

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2SC4097

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CZT32C

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MMBT2907A

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2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WS1

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KTC3875

Bipolar Transistors ,KTC3875 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,AL

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2SB624

Bipolar Transistors ,2SB624 ,PNP ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,BV3

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2SC3437

Bipolar Transistors ,2SC3437 ,NPN ,VCEO:15V ,VCBO: 40V ,150mW ,200mA ,SOT-23,CHR

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2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,900mW ,1000mA ,TO-92MOD,R

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2SC2714

Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QY

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BC857W

Bipolar Transistors ,BC857W ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-323,3G

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MMBT3904

Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-23

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CJ818B

Bipolar Transistors ,CJ818B ,PNP ,VCEO:30V ,VCBO: 30V ,350mW ,3000mA ,SOT-23-6L

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2SC4102

Bipolar Transistors ,2SC4102 ,NPN ,VCEO:120V ,VCBO: 120V ,200mW ,50mA ,SOT-323,TS

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2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZQ

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2SC3052

Bipolar Transistors ,2SC3052 ,NPN ,VCEO:50V ,VCBO: 50V ,150mW ,200mA ,SOT-23,LE

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2SD602

Bipolar Transistors ,2SD602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WS1

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MMBT3904SL

Bipolar Transistors ,MMBT3904SL ,NPN ,VCEO:40V ,VCBO: 60V ,100mW ,200mA ,SOT-923

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MMBT2222AT

Bipolar Transistors ,MMBT2222AT ,NPN ,VCEO:40V ,VCBO: 75V ,150mW ,600mA ,SOT-523

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Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Product number：	QT-TQT082P12VC22010503CJ
Manufacturer Product Number：	2SA2018
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	12V
Base Voltage(VCBO) ：	15V
Power Disspation ：	150mW
package ：	SOT-523
Description：	Bipolar Transistors ,2SA2018 ,PNP ,VCEO:12V ,VCBO: 15V ,150mW ,500mA ,SOT-523

2SA2018,CJ,Bipolar Transistors

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2SA2018,CJ,Bipolar Transistors

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