HNST WELCOME！ 0755-23173910

English |中文

{{searchSelectTypeText}}

Search

ever ohms SMD fuse current diverter walter fuse Precision resistor Alloy resistance

Cart {{cartCount}}

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

2SA812,CJ,Bipolar Transistors

2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M4

✖

The image is for reference only, please refer to the drawing for details

Data Sheet： 2SA812_SOT-23.pdf

Product number：	QT-TQT095P50VC02060301CJ4
Manufacturer Product Number：	2SA812
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M4

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

2SA1037

Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FQ

$0.000000 More
2SA1037

Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FR

$0.000000 More
2SA1037

Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FS

$0.000000 More
2SA1235A

Bipolar Transistors ,2SA1235A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,200mA ,SOT-23,M.E

$0.000000 More
2SA1235A

Bipolar Transistors ,2SA1235A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,200mA ,SOT-23,M.F

$0.000000 More
A733

Bipolar Transistors ,A733 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23

$0.000000 More

File

File Type	File Name
Data Sheet	2SA812_SOT-23.pdf

Lead time： Estimated delivery date 2026-09-19

Online Inquiry

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Product Recommendation Maker Dynamics Applications

Product number： {{currentProduct.code}}

Product information： {{currentProduct.descCn}}

Order quantity： {{currentProduct.num}}

Cart （{{myCartItems.length}}Item）

Total amount：

{{isCn?'￥':'$'}}{{cartProductTotal}}