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2SB1197,CJ,Bipolar Transistors

2SB1197

Bipolar Transistors ,2SB1197 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AHR

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT119P32VC01061201CJR
Manufacturer Product Number：	2SB1197
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	32V
Base Voltage(VCBO) ：	40V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SB1197 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AHR

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Series Introduce Find Similar

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2SA1036

Bipolar Transistors ,2SA1036 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23,HR

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2SA1036

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Lead time： Estimated delivery date 2026-07-02

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Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

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The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

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