2SB1218A_CJ_Bipolar Transistors_PNP_45V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SB1218A_SOT-323

Lead time： Estimated delivery date 2026-06-11

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2SA1036

Bipolar Transistors ,2SA1036 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23,HR

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KTA1505

Bipolar Transistors ,KTA1505 ,PNP ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,AZG

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PZTA44

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2SC5585

Bipolar Transistors ,2SC5585 ,NPN ,VCEO:12V ,VCBO: 15V ,150mW ,500mA ,SOT-523

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2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WQ1

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BCX19

Bipolar Transistors ,BCX19 ,NPN ,VCEO:45V ,VCBO: 50V ,225mW ,500mA ,SOT-23

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2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,500mW ,1000mA ,SOT-89-3L,R

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2SA1586

Bipolar Transistors ,2SA1586 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-323,SG

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2SA1579

Bipolar Transistors ,2SA1579 ,PNP ,VCEO:120V ,VCBO: 120V ,100mW ,50mA ,SOT-323,RR

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SS8050

Bipolar Transistors ,SS8050 ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,1500mA ,SOT-323

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FMMT4124

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2SD602A

Bipolar Transistors ,2SD602A ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,500mA ,SOT-23,XS

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2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZS

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KTA2014

Bipolar Transistors ,KTA2014 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-323,SG

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KTC3876

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2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,900mW ,1000mA ,TO-92L,Y

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PZT2907A

Bipolar Transistors ,PZT2907A ,PNP ,VCEO:60V ,VCBO: 60V ,1000mW ,600mA ,SOT-223

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BC807W

Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5C

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2SA1611

Bipolar Transistors ,2SA1611 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,M5

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What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Product number：	QT-TQT121P45VC24010302CJR
Manufacturer Product Number：	2SB1218A
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	45V
Base Voltage(VCBO) ：	45V
Power Disspation ：	150mW
package ：	SOT-323
Description：	Bipolar Transistors ,2SB1218A ,PNP ,VCEO:45V ,VCBO: 45V ,150mW ,100mA ,SOT-323,BR1

2SB1218A,CJ,Bipolar Transistors

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2SB1218A,CJ,Bipolar Transistors

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