2SB624_CJ_Bipolar Transistors_PNP_25V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-10-09

Online Inquiry

Product Recommendation Maker Dynamics Applications

BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6E

$0.000000 More
S9018W

Bipolar Transistors ,S9018W ,NPN ,VCEO:15V ,VCBO: 30V ,200mW ,50mA ,SOT-323

$0.000000 More
2SA1577

Bipolar Transistors ,2SA1577 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-323,HP

$0.000000 More
2SA2029

Bipolar Transistors ,2SA2029 ,PNP ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-723,FQ

$0.000000 More
MMBTA55

Bipolar Transistors ,MMBTA55 ,PNP ,VCEO:60V ,VCBO: 60V ,225mW ,500mA ,SOT-23

$0.000000 More
2SC2714

Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QY

$0.000000 More
BC808

Bipolar Transistors ,BC808 ,PNP ,VCEO:25V ,VCBO: 30V ,300mW ,800mA ,SOT-23,5G

$0.000000 More
2PD601AW

Bipolar Transistors ,2PD601AW ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-323,6E

$0.000000 More
2SC4177

Bipolar Transistors ,2SC4177 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,L7

$0.000000 More
2SC1654

Bipolar Transistors ,2SC1654 ,NPN ,VCEO:160V ,VCBO: 180V ,150mW ,50mA ,SOT-23

$0.000000 More
2SC4081

Bipolar Transistors ,2SC4081 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-323,BS

$0.000000 More
D882

Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,O

$0.000000 More
2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,500mW ,1000mA ,SOT-89-3L,O

$0.000000 More
CZT32C

Bipolar Transistors ,CZT32C ,PNP ,VCEO:100V ,VCBO: 100V ,1000mW ,3000mA ,SOT-223

$0.000000 More
S9015

Bipolar Transistors ,S9015 ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23

$0.007228 More
2SC2411

Bipolar Transistors ,2SC2411 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23

$0.000000 More
2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WR1

$0.000000 More
D882

Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,Y

$0.000000 More
SS8050

Bipolar Transistors ,SS8050 ,NPN ,VCEO:25V ,VCBO: 40V ,300mW ,1500mA ,SOT-23

$0.000000 More
KTC3876

Bipolar Transistors ,KTC3876 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,500mA ,SOT-23,WO

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Product number：	QT-TQT140P25VC03061701CJ3
Manufacturer Product Number：	2SB624
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	30V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SB624 ,PNP ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,BV3

2SB624,CJ,Bipolar Transistors

2SB624

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SB624,CJ,Bipolar Transistors

2SB624

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications