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2SC1623,CJ,Bipolar Transistors

2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23

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The image is for reference only, please refer to the drawing for details

Data Sheet： 2SC1623_SOT-23.pdf

Product number：	QT-TQT167N50VC02060301CJ5
Manufacturer Product Number：	2SC1623
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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File

File Type	File Name
Data Sheet	2SC1623_SOT-23.pdf

Lead time： Estimated delivery date 2026-09-04

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Product Recommendation Maker Dynamics Applications

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What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

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