2SC2412_CJ_Bipolar Transistors_NPN_50V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-09-03

Online Inquiry

Product Recommendation Maker Dynamics Applications

2SC2714

Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QO

$0.000000 More
MMSTA56

Bipolar Transistors ,MMSTA56 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-323

$0.000000 More
MMBT2222AT

Bipolar Transistors ,MMBT2222AT ,NPN ,VCEO:40V ,VCBO: 75V ,150mW ,600mA ,SOT-523

$0.000000 More
S9012

Bipolar Transistors ,S9012 ,PNP ,VCEO:25V ,VCBO: 40V ,300mW ,500mA ,SOT-23

$0.000000 More
2SB1116

Bipolar Transistors ,2SB1116 ,PNP ,VCEO:50V ,VCBO: 60V ,350mW ,1000mA ,SOT-23

$0.000000 More
2SA1162

Bipolar Transistors ,2SA1162 ,PNP ,VCEO:50V ,VCBO: 50V ,150mW ,150mA ,SOT-23,SG

$0.000000 More
2SD0602A

Bipolar Transistors ,2SD0602A ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,500mA ,SOT-23,XS

$0.000000 More
2SC2712

Bipolar Transistors ,2SC2712 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,LG

$0.000000 More
2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,900mW ,1000mA ,TO-92MOD,R

$0.000000 More
MMBTA93

Bipolar Transistors ,MMBTA93 ,PNP ,VCEO:200V ,VCBO: 200V ,300mW ,500mA ,SOT-23

$0.000000 More
FMMT591

Bipolar Transistors ,FMMT591 ,PNP ,VCEO:60V ,VCBO: 80V ,250mW ,1000mA ,SOT-23

$0.000000 More
2SA1832

Bipolar Transistors ,2SA1832 ,PNP ,VCEO:50V ,VCBO: 50V ,100mW ,150mA ,SOT-523,SG

$0.000000 More
BC858W

Bipolar Transistors ,BC858W ,PNP ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,3J

$0.000000 More
BC808

Bipolar Transistors ,BC808 ,PNP ,VCEO:25V ,VCBO: 30V ,300mW ,800mA ,SOT-23,5E

$0.000000 More
2SC3052

Bipolar Transistors ,2SC3052 ,NPN ,VCEO:50V ,VCBO: 50V ,150mW ,200mA ,SOT-23,LF

$0.000000 More
B772

Bipolar Transistors ,B772 ,PNP ,VCEO:30V ,VCBO: 40V ,1250mW ,3000mA ,SOT-223,GR

$0.000000 More
BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3G

$0.000000 More
FMMT619

Bipolar Transistors ,FMMT619 ,NPN ,VCEO:50V ,VCBO: 50V ,350mW ,2000mA ,SOT-23

$0.000000 More
BC858

Bipolar Transistors ,BC858 ,PNP ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,3J

$0.000000 More
MMBTA42

Bipolar Transistors ,MMBTA42 ,NPN ,VCEO:300V ,VCBO: 300V ,350mW ,300mA ,SOT-23

$0.016144 More

Product Recommendation Maker Dynamics Applications

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Testing and Inspection Methods for Silicon Carbide (SiC) Diodes Silicon carbide (SiC) diodes have low switching losses, high reverse withstand voltage, and thermal stability, and have been widely used. Here are the usage and testing methods for SiC diodes:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Product number：	QT-TQT194N50VC02061101CJQ
Manufacturer Product Number：	2SC2412
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SC2412 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,BQ

2SC2412,CJ,Bipolar Transistors

2SC2412

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SC2412,CJ,Bipolar Transistors

2SC2412

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications