HNST WELCOME！ 0755-23173910

English /中文

Search

Precision resistor fuse walter SMD fuse ever ohms current diverter Alloy resistance

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

2SC2714,CJ,Bipolar Transistors

2SC2714

Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QY

✖

The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT204N30VC01142401CJY
Manufacturer Product Number：	2SC2714
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	40V
Power Disspation ：	100mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QY

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-14

Product Recommendation Maker Dynamics Applications

2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,900mW ,1000mA ,TO-92MOD,Y

$0.000000 More
2SB624

Bipolar Transistors ,2SB624 ,PNP ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,BV3

$0.000000 More
2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZS

$0.000000 More
D882

Bipolar Transistors ,D882 ,NPN ,VCEO:30V ,VCBO: 40V ,1500mW ,30000mA ,SOT-223,GR

$0.000000 More
MMSTA92

Bipolar Transistors ,MMSTA92 ,PNP ,VCEO:305V ,VCBO: 310V ,200mW ,200mA ,SOT-323

$0.000000 More
MMST5551

Bipolar Transistors ,MMST5551 ,NPN ,VCEO:160V ,VCBO: 180V ,200mW ,600mA ,SOT-323

$0.000000 More
2SC2412

Bipolar Transistors ,2SC2412 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,BR

$0.000000 More

Product Recommendation Maker Dynamics Applications

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Comparison of driving circuit differences between SiC MOSFET and Si IGBT SiC MOSFET and Si IGBT are both indispensable products for the development of electronic products. SiC MOSFET and Si IGBT have many common characteristics and differences. Therefore, the following is a comparison of their product differences:

Combination of Silicon Carbide (SiC) Power Management Solutions Silicon carbide solutions support the replacement of aircraft's pneumatic and hydraulic systems with smaller, lighter, and more efficient electrical solutions to power onboard AC generators, actuators, and auxiliary power units (APU). This type of solution can also reduce the maintenance requirements of these systems. However, the most significant contribution of SiC technology lies in its mission to electrify commercial transport vehicles, which are one of the world's largest sources of GHG emissions. With the advent of 1700V metal oxide semiconductor field-effect transistors (MOSFETs) and configurable digital gate drive technology, today's SiC solutions enable designers to generate maximum productivity with minimal energy consumption for these systems.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

Calculation method and formula for MOS transistor losses The losses of MOS transistors can be estimated by calculating their current losses and power losses. Current loss refers to the loss caused by the passage of current inside a MOS transistor, which is due to the resistance loss between electrons and the silicon substrate when passing through the MOS transistor. This loss can be calculated using the following formula:

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Product Recommendation Maker Dynamics Applications