2SC4098_CJ_Bipolar Transistors_NPN_25V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SC4098_SOT-323

Lead time： Estimated delivery date 2026-09-03

Online Inquiry

Product Recommendation Maker Dynamics Applications

2SA812

Bipolar Transistors ,2SA812 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23,M7

$0.000000 More
2SC4180

Bipolar Transistors ,2SC4180 ,NPN ,VCEO:120V ,VCBO: 120V ,150mW ,50mA ,SOT-323,D15

$0.000000 More
2SC4738

Bipolar Transistors ,2SC4738 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-523,LL

$0.000000 More
2SC2712

Bipolar Transistors ,2SC2712 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-23,LY

$0.000000 More
2SC4180

Bipolar Transistors ,2SC4180 ,NPN ,VCEO:120V ,VCBO: 120V ,150mW ,50mA ,SOT-323,D17

$0.000000 More
2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WQ1

$0.000000 More
BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3G

$0.000000 More
MMBT3904M

Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,100mW ,200mA ,SOT-723,1N

$0.014073 More
2SC3052

Bipolar Transistors ,2SC3052 ,NPN ,VCEO:50V ,VCBO: 50V ,150mW ,200mA ,SOT-23,LF

$0.000000 More
A733

Bipolar Transistors ,A733 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23

$0.000000 More
S9013W

Bipolar Transistors ,S9013W ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,500mA ,SOT-323

$0.000000 More
MMSTA56

Bipolar Transistors ,MMSTA56 ,PNP ,VCEO:80V ,VCBO: 80V ,200mW ,500mA ,SOT-323

$0.000000 More
MMBT4403

Bipolar Transistors ,MMBT4403 ,PNP ,VCEO:40V ,VCBO: 40V ,300mW ,600mA ,SOT-23

$0.000000 More
2SD1819A

Bipolar Transistors ,2SD1819A ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,100mA ,SOT-323,ZQ

$0.000000 More
2SA1585

Bipolar Transistors ,2SA1585 ,PNP ,VCEO:20V ,VCBO: 20V ,350mW ,2000mA ,SOT-23,AE

$0.000000 More
BCP53

Bipolar Transistors ,BCP53 ,PNP ,VCEO:80V ,VCBO: 100V ,1500mW ,1000mA ,SOT-223,16

$0.000000 More
2SC4116

Bipolar Transistors ,2SC4116 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-323,LY

$0.000000 More
BCW61

Bipolar Transistors ,BCW61 ,PNP ,VCEO:32V ,VCBO: 32V ,250mW ,100mA ,SOT-23,BA

$0.000000 More
2SB1218A

Bipolar Transistors ,2SB1218A ,PNP ,VCEO:45V ,VCBO: 45V ,150mW ,100mA ,SOT-323,BQ1

$0.000000 More
2SC2859

Bipolar Transistors ,2SC2859 ,NPN ,VCEO:30V ,VCBO: 35V ,150mW ,500mA ,SOT-23,WG

$0.000000 More

Product Recommendation Maker Dynamics Applications

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

What are the advantages of MOS transistor over transistor? What are the differences and advantages between MOS (Metal Oxide Semiconductor Field Effect Transistor) and transistors? This article provides a detailed introduction.

Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

What are the advantages of SiC MOSFET over Si MOSFET Compared with Si MOSFETs, SiC MOSFETs have many advantages, including the following:

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What is SiC MOSFET? SIC MOSFET (Silicon Carbide MOSFET) is a new type of semiconductor device with high thermal stability, high conductivity, and high frequency characteristics. Learning SIC MOSFET includes the following aspects:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Silicon carbide (SiC) diodes are diodes made from silicon carbide as raw material. Silicon carbide diode, claimed to have zero reverse recovery time, is a dedicated boost diode for high-efficiency PFC boost circuits.

Product number：	QT-TQT240N25VC01060402CJN
Manufacturer Product Number：	2SC4098
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	40V
Power Disspation ：	200mW
package ：	SOT-323
Description：	Bipolar Transistors ,2SC4098 ,NPN ,VCEO:25V ,VCBO: 40V ,200mW ,50mA ,SOT-323,AN

2SC4098,CJ,Bipolar Transistors

2SC4098

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SC4098,CJ,Bipolar Transistors

2SC4098

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications