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2SC4116,CJ,Bipolar Transistors

2SC4116

Bipolar Transistors ,2SC4116 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-323,LG

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The image is for reference only, please refer to the drawing for details

Data Sheet： 2SC4116_SOT-323

Product number：	QT-TQT244N50VC02141102CJG
Manufacturer Product Number：	2SC4116
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	100mW
package ：	SOT-323
Description：	Bipolar Transistors ,2SC4116 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-323,LG

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	2SC4116_SOT-323

Lead time： Estimated delivery date 2025-05-14

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Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

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