2SC4215_CJ_Bipolar Transistors_NPN_30V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SC4215_SOT-323

Lead time： Estimated delivery date 2026-06-11

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2SB709A

Bipolar Transistors ,2SB709A ,PNP ,VCEO:45V ,VCBO: 45V ,200mW ,100mA ,SOT-23,BS1

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BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3E

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2SA1179

Bipolar Transistors ,2SA1179 ,PNP ,VCEO:50V ,VCBO: 55V ,200mW ,150mA ,SOT-23

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BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6E

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BCP53

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2SC2411

Bipolar Transistors ,2SC2411 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23

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BC847W

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KTA1298

Bipolar Transistors ,KTA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,IY

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BC807W

Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5C

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BC848

Bipolar Transistors ,BC848 ,NPN ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,1J

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BCP69

Bipolar Transistors ,BCP69 ,PNP ,VCEO:20V ,VCBO: 32V ,1000mW ,1000mA ,SOT-223,16

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BC857

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MMBTA42

Bipolar Transistors ,MMBTA42 ,NPN ,VCEO:300V ,VCBO: 300V ,350mW ,300mA ,SOT-23

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BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3B

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2SC2715

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2SA1576A

Bipolar Transistors ,2SA1576A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-323,FS

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MMBTA93

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BC847W

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MMSTA56

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FMMT593

Bipolar Transistors ,FMMT593 ,PNP ,VCEO:100V ,VCBO: 120V ,250mW ,1000mA ,SOT-23

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Introduction to Low Sensitivity SiC Power Modules Low inductance SiC power module refers to a power module that uses silicon carbide (SiC) as a semiconductor material and has a lower inductance value. Compared with traditional silicon (Si) power modules, low inductance SiC power modules have higher switching speed and lower switching losses, thereby improving the efficiency and reliability of the system.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Calculation methods for P-channel enhanced VDS and CGS In a P-channel Enhanced Mode FET, VDS represents the voltage between the drain and source, while CGS represents the capacitance between the gate and source. When calculating VDS, it is necessary to consider the working state of the P-Channel Enhanced Mode FET. Generally, the following formula can be used for calculation:

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

Product number：	QT-TQT247N30VC01142402CJR
Manufacturer Product Number：	2SC4215
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	30V
Base Voltage(VCBO) ：	40V
Power Disspation ：	100mW
package ：	SOT-323
Description：	Bipolar Transistors ,2SC4215 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-323,QR

2SC4215,CJ,Bipolar Transistors

2SC4215

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2SC4215,CJ,Bipolar Transistors

2SC4215

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