2SC5658_CJ_Bipolar Transistors_NPN_50V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File Type	File Name
Data Sheet	2SC5658_SOT-723

Lead time： Estimated delivery date 2026-10-30

Online Inquiry

Product Recommendation Maker Dynamics Applications

MMBT4403

Bipolar Transistors ,MMBT4403 ,PNP ,VCEO:40V ,VCBO: 40V ,300mW ,600mA ,SOT-23

$0.000000 More
MMBT3906T

Bipolar Transistors ,MMBT3906T ,PNP ,VCEO:40V ,VCBO: 40V ,150mW ,200mA ,SOT-523

$0.000000 More
BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3B

$0.000000 More
2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WS1

$0.000000 More
2SB624

Bipolar Transistors ,2SB624 ,PNP ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,BV2

$0.000000 More
2SD0602A

Bipolar Transistors ,2SD0602A ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,500mA ,SOT-23,XR

$0.000000 More
BC847W

Bipolar Transistors ,BC847W ,NPN ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-323,1E

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-23

$0.000000 More
2SA1579

Bipolar Transistors ,2SA1579 ,PNP ,VCEO:120V ,VCBO: 120V ,100mW ,50mA ,SOT-323,RS

$0.000000 More
BC848W

Bipolar Transistors ,BC848W ,NPN ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,1L

$0.000000 More
2SC4102

Bipolar Transistors ,2SC4102 ,NPN ,VCEO:120V ,VCBO: 120V ,200mW ,50mA ,SOT-323,TS

$0.000000 More
KTC3876

Bipolar Transistors ,KTC3876 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,500mA ,SOT-23,WY

$0.000000 More
2PD601AW

Bipolar Transistors ,2PD601AW ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-323,6E

$0.000000 More
BCP55

Bipolar Transistors ,BCP55 ,NPN ,VCEO:60V ,VCBO: 60V ,1500mW ,1000mA ,SOT-223,16

$0.000000 More
2SC3437

Bipolar Transistors ,2SC3437 ,NPN ,VCEO:15V ,VCBO: 40V ,150mW ,200mA ,SOT-23,CHO

$0.000000 More
2SB1218A

Bipolar Transistors ,2SB1218A ,PNP ,VCEO:45V ,VCBO: 45V ,150mW ,100mA ,SOT-323,BS1

$0.000000 More
BC856W

Bipolar Transistors ,BC856W ,PNP ,VCEO:65V ,VCBO: 80V ,150mW ,100mA ,SOT-323,3B

$0.000000 More
BC857T

Bipolar Transistors ,BC857T ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-523,3F

$0.000000 More
2SA1298

Bipolar Transistors ,2SA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23.IO

$0.000000 More
2SC2715

Bipolar Transistors ,2SC2715 ,NPN ,VCEO:30V ,VCBO: 35V ,350mW ,50mA ,SOT-23,RR1

$0.000000 More

Product Recommendation Maker Dynamics Applications

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Why does high negative pressure in SiC MOS affect threshold drift The threshold drift of SiC MOSFET is affected by negative pressure because this device has a high leakage current, which reduces the difference between the control terminal voltage and the source terminal voltage, thereby affecting the switching performance of MOSFET. In addition, high negative pressure may also cause MOSFETs to enter rupture mode and trigger other adverse effects.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Detailed explanation of reverse recovery principle of silicon carbide (SiC) diode Silicon carbide diodes are unipolar devices, so compared to traditional silicon fast recovery diodes (silicon FRDs), silicon carbide diodes have ideal reverse recovery characteristics. When the device switches from forward to reverse blocking direction, there is almost no reverse recovery power, and the reverse recovery time is less than 20ns. Even the reverse recovery time of 600V10A silicon carbide diodes is less than 10ns.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

Product number：	QT-TQT268N50VC02141104CJS
Manufacturer Product Number：	2SC5658
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	50V
Base Voltage(VCBO) ：	60V
Power Disspation ：	100mW
package ：	SOT-723
Description：	Bipolar Transistors ,2SC5658 ,NPN ,VCEO:50V ,VCBO: 60V ,100mW ,150mA ,SOT-723,FS

2SC5658,CJ,Bipolar Transistors

2SC5658

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SC5658,CJ,Bipolar Transistors

2SC5658

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications