HNST WELCOME！ 0755-23173910

English /中文

Search

SMD fuse ever ohms Precision resistor fuse Alloy resistance walter current diverter

Cart 0

你当前的浏览器版本过低或不支持。请升级或更换浏览器。推荐浏览器 Chrome Edge。

2SD0602,CJ,Bipolar Transistors

2SD0602

Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WQ1

✖

The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT271N25VC03060501CJQ
Manufacturer Product Number：	2SD0602
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	30V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SD0602 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,500mA ,SOT-23,WQ1

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name

Lead time： Estimated delivery date 2025-05-04

Product Recommendation Maker Dynamics Applications

MMST2907A

Bipolar Transistors ,MMST2907A ,PNP ,VCEO:60V ,VCBO: 60V ,200mW ,600mA ,SOT-323

$0.011728 More
BC857

Bipolar Transistors ,BC857 ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,100mA ,SOT-23,3G

$0.000000 More
2SD596

Bipolar Transistors ,2SD596 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,DV2

$0.000000 More
2SB1116

Bipolar Transistors ,2SB1116 ,PNP ,VCEO:50V ,VCBO: 60V ,350mW ,1000mA ,SOT-23

$0.000000 More
KTC3876

Bipolar Transistors ,KTC3876 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,500mA ,SOT-23,WY

$0.000000 More
BC848W

Bipolar Transistors ,BC848W ,NPN ,VCEO:30V ,VCBO: 30V ,150mW ,100mA ,SOT-323,1J

$0.000000 More
FMMT619

Bipolar Transistors ,FMMT619 ,NPN ,VCEO:50V ,VCBO: 50V ,350mW ,2000mA ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

What are the measures for surge suppression? The reasons for generating surges are multifaceted, and surges are a type of spike pulse with high rising speed and short duration. Overvoltage in the power grid, switch ignition, reverse voltage, static electricity, and motor/power supply noise are all factors that cause surges. And surge protectors provide a simple, economical, and reliable protection method for power surge protection of electronic devices.

Why is the development of high-voltage SiC MOSFET devices slow High voltage SiC MOSFET devices have many advantages, such as low on resistance, high temperature performance, and high-frequency characteristics, and therefore have broad prospects in some applications, such as electric vehicles, power electronic converters, and solar inverters. However, the development of these devices has been relatively slow, possibly due to the following reasons:

Advantages of SIC MOSFET modules The MOS module is a network connection network server developed by CiscoIOS, which can download quickly and effectively manage network server resources. The MOS module enables administrators to access network servers more conveniently to manage servers, modify server communication parameters, and modify server business scripts. MoS provides more possibilities and flexibility for enhancing applications, and also solves traditional system management problems, providing more flexibility and adaptability for system management.

Analysis of Silicon Carbide (SiC) Technology Barriers: What are the Silicon Carbide Technology Barriers Groove type silicon carbide power devices have greater manufacturing difficulty. According to the different device structures, silicon carbide power devices can be mainly divided into planar devices and trench devices. Flat silicon carbide power devices have good unit consistency, simple manufacturing process, but are prone to JFET effect and have high parasitic capacitance and on state resistance. Compared to planar devices, groove type silicon carbide power devices have lower unit consistency and more complex manufacturing processes. However, the groove structure is beneficial for increasing device unit density, reducing the occurrence of JFET effect, and solving the problem of low channel mobility. It has excellent performance such as low on resistance, low parasitic capacitance, and low switching energy consumption, and has significant cost and performance advantages. It has become the mainstream direction of silicon carbide power device development.

Introduction to SiC Silicon Carbide MOSFET Devices SiC devices are a new type of silicon-based MOSFET, especially SiC power devices with higher switching speed and wider output frequency. SiC power chips are mainly composed of MOSFETs and PN junctions.

Silicon carbide diodes: an important role in the photovoltaic industry Silicon carbide (SiC) diodes have high stability and efficiency, making them suitable for various photovoltaic applications such as solar panels and solar systems. For example, in solar panels, silicon carbide diodes can prevent excessive current or overvoltage, thereby protecting solar cell components. In solar energy systems, it can also limit the charging current and control the charging and discharging process of the battery.

The main six stages of SiC chip manufacturing The main six specific processes of SiC chip manufacturing are pre-processing, wafer processing, crystal growth, integrated circuit design and fabrication, chip testing, and integration.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

Product Recommendation Maker Dynamics Applications