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2SD1781,CJ,Bipolar Transistors

2SD1781

Bipolar Transistors ,2SD1781 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AFR

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The image is for reference only, please refer to the drawing for details

Product number：	QT-TQT293N32VC01061201CJR
Manufacturer Product Number：	2SD1781
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	32V
Base Voltage(VCBO) ：	40V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SD1781 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,800mA ,SOT-23,AFR

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

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Bipolar Transistors ,2SC2411 ,NPN ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23

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Lead time： Estimated delivery date 2026-03-10

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Wide application of silicon carbide (SiC) MOSFET in new energy charging piles Silicon carbide power devices cover series such as 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A, etc. The products have been put into mass production and can fully benchmark the advanced quality and level of international brand peers. We have successively launched full current voltage level silicon carbide Schottky diodes and silicon carbide MOSFET series products that have passed industrial and automotive reliability tests, with performance reaching the international advanced level. They are applied in fields such as solar inverters, new energy electric vehicles and charging piles, smart grids, high-frequency welding, rail transportation, industrial control special power supplies, and national defense and military industries.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Silicon carbide MOSFET modules have significant advantages in the application of high-power power systems such as photovoltaics, wind power, electric vehicles, and rail transit. The advantages of high voltage, high frequency, and high efficiency of silicon carbide devices can break through the limitations of existing electric vehicle motor designs due to device performance, which is currently the focus of research and development in the field of electric vehicle motors at home and abroad.

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