2SD596_CJ_Bipolar Transistors_NPN_25V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-07-12

Online Inquiry

Product Recommendation Maker Dynamics Applications

KTC4077

Bipolar Transistors ,KTC4077 ,NPN ,VCEO:120V ,VCBO: 120V ,100mW ,100mA ,SOT-323,DGR

$0.000000 More
2SC2714

Bipolar Transistors ,2SC2714 ,NPN ,VCEO:30V ,VCBO: 40V ,100mW ,20mA ,SOT-23,QY

$0.000000 More
BCX19

Bipolar Transistors ,BCX19 ,NPN ,VCEO:45V ,VCBO: 50V ,225mW ,500mA ,SOT-23

$0.000000 More
BC857W

Bipolar Transistors ,BC857W ,PNP ,VCEO:45V ,VCBO: 50V ,150mW ,100mA ,SOT-323,3E

$0.000000 More
2SC4081

Bipolar Transistors ,2SC4081 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-323,BQ

$0.000000 More
2SB709A

Bipolar Transistors ,2SB709A ,PNP ,VCEO:45V ,VCBO: 45V ,200mW ,100mA ,SOT-23,BS1

$0.000000 More
CZT5401

Bipolar Transistors ,CZT5401 ,PNP ,VCEO:150V ,VCBO: 160V ,1000mW ,600mA ,SOT-223

$0.000000 More
2SA1179

Bipolar Transistors ,2SA1179 ,PNP ,VCEO:50V ,VCBO: 55V ,200mW ,150mA ,SOT-23

$0.000000 More
2SA1036

Bipolar Transistors ,2SA1036 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-23,HP

$0.000000 More
2SD1306

Bipolar Transistors ,2SD1306 ,NPN ,VCEO:15V ,VCBO: 30V ,150mW ,700mA ,SOT-23,ND

$0.000000 More
2SB624

Bipolar Transistors ,2SB624 ,PNP ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,BV4

$0.000000 More
MMBT3904

Bipolar Transistors ,MMBT3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-23

$0.006506 More
2PD601AW

Bipolar Transistors ,2PD601AW ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-323,6F

$0.000000 More
2SC5344

Bipolar Transistors ,2SC5344 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,FAY

$0.000000 More
BC807W

Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5B

$0.000000 More
BC856W

Bipolar Transistors ,BC856W ,PNP ,VCEO:65V ,VCBO: 80V ,150mW ,100mA ,SOT-323,3A

$0.000000 More
MMBT2907A

Bipolar Transistors ,MMBT2907A ,PNP ,VCEO:60V ,VCBO: 60V ,250mW ,600mA ,SOT-23

$0.009638 More
BC807

Bipolar Transistors ,BC807 ,PNP ,VCEO:45V ,VCBO: 50V ,300mW ,500mA ,SOT-23,5B

$0.000000 More
S8050

Bipolar Transistors ,S8050 ,NPN ,VCEO:25V ,VCBO: 40V ,300mW ,500mA ,SOT-23

$0.000000 More
3DK2222A

Bipolar Transistors ,3DK2222A ,NPN ,VCEO:40V ,VCBO: 75V ,225mW ,600mA ,SOT-23

$0.000000 More

Product Recommendation Maker Dynamics Applications

What are the differences between MOSFET and SBD? MOSFET and SBD are two different types of semiconductor devices, with the main differences as follows: 1. Different working principles, 2. Different conduction characteristics, and 3. Different costs and complexities.

Instructions for using silicon carbide (SiC) diodes When using silicon carbide (SiC) diodes, some safety factors should be taken into account, such as avoiding excessive current flowing through the diode to prevent damage. During use, attention should also be paid to circuit design and diode selection to ensure optimal system performance.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

Circuit symbols for silicon carbide (SIC) MOSFETs The circuit symbol of silicon carbide (SiC) MOSFET is similar to that of traditional silicon MOSFET, except that some special markings are added to the symbol to indicate its characteristics.

Application of Silicon Carbide (SiC) Ceramics in Semiconductors Silicon carbide (SiC) ceramics are a semiconductor material widely used in many semiconductor applications. Here are some typical applications of silicon carbide ceramic semiconductors:

SiC MOS driver design SiC MOS driver design is a complex process that requires consideration of many factors, such as electrical performance, thermal characteristics, and packaging selection. To improve reliability and performance, the following aspects should be considered:

Reverse Recovery Current and Electrical Test Item Vgs of Silicon Carbide (SiC) MOSFET The electrical testing item Vgs of SiC MOSFET mainly refers to the Gate Source Voltage. Reverse Recovery Current (Irr) refers to the current flowing through a diode during the reverse recovery process.

The working environment and application market of SiGaNSiC MOSFETs and Si IGBTs Compared with MOSFET, SiC perfectly solves the problem of difficult simultaneous implementation of high voltage and high frequency in silicon-based materials. Based on compatibility with high voltage and medium frequency, SiC MOSFET has become the optimal solution for electric vehicles, charging stations, and photovoltaic inverters (without considering cost) due to its high efficiency and small size;

What are the solutions to reduce losses in SiC modules? The SiC module loss reduction scheme mainly considers the following four aspects: adopting low voltage and low frequency design, optimizing the driver program, optimizing the structural design, and adopting low side resonance technology.

Product number：	QT-TQT322N25VC03061701CJ4
Manufacturer Product Number：	2SD596
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	NPN
Emitter Voltage(VCEO) ：	25V
Base Voltage(VCBO) ：	30V
Power Disspation ：	200mW
package ：	SOT-23
Description：	Bipolar Transistors ,2SD596 ,NPN ,VCEO:25V ,VCBO: 30V ,200mW ,700mA ,SOT-23,DV4

2SD596,CJ,Bipolar Transistors

2SD596

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

2SD596,CJ,Bipolar Transistors

2SD596

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications