BC807_CJ_Bipolar Transistors_PNP_45V_Parameters_ Price

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

Lead time： Estimated delivery date 2026-08-03

Online Inquiry

Product Recommendation Maker Dynamics Applications

2SC1654

Bipolar Transistors ,2SC1654 ,NPN ,VCEO:160V ,VCBO: 180V ,150mW ,50mA ,SOT-23

$0.000000 More
BC846

Bipolar Transistors ,BC846 ,NPN ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,1B

$0.000000 More
2SA1037

Bipolar Transistors ,2SA1037 ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,150mA ,SOT-23,FQ

$0.000000 More
2SA1013

Bipolar Transistors ,2SA1013 ,PNP ,VCEO:160V ,VCBO: 160V ,500mW ,1000mA ,SOT-89-3L,R

$0.000000 More
KTC3265

Bipolar Transistors ,KTC3265 ,NPN ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23,EY

$0.000000 More
CJ201NL

Bipolar Transistors ,CJ201NL ,NPN ,VCEO:20V ,VCBO: 30V ,300mW ,1000mA ,SOT-23

$0.000000 More
2SA1235A

Bipolar Transistors ,2SA1235A ,PNP ,VCEO:50V ,VCBO: 60V ,200mW ,200mA ,SOT-23,M.E

$0.000000 More
BC858

Bipolar Transistors ,BC858 ,PNP ,VCEO:30V ,VCBO: 30V ,200mW ,100mA ,SOT-23,3J

$0.000000 More
MMBT4401

Bipolar Transistors ,MMBT4401 ,NPN ,VCEO:40V ,VCBO: 60V ,300mW ,600mA ,SOT-23

$0.010240 More
BC818

Bipolar Transistors ,BC818 ,NPN ,VCEO:25V ,VCBO: 30V ,300mW ,500mA ,SOT-23,6E

$0.000000 More
2SC1623

Bipolar Transistors ,2SC1623 ,NPN ,VCEO:50V ,VCBO: 60V ,200mW ,100mA ,SOT-323,L5

$0.000000 More
BCP55

Bipolar Transistors ,BCP55 ,NPN ,VCEO:60V ,VCBO: 60V ,1500mW ,1000mA ,SOT-223,16

$0.000000 More
2SA1577

Bipolar Transistors ,2SA1577 ,PNP ,VCEO:32V ,VCBO: 40V ,200mW ,500mA ,SOT-323,HP

$0.000000 More
2SA1298

Bipolar Transistors ,2SA1298 ,PNP ,VCEO:30V ,VCBO: 35V ,200mW ,800mA ,SOT-23.IO

$0.000000 More
MMST3904

Bipolar Transistors ,MMST3904 ,NPN ,VCEO:40V ,VCBO: 60V ,200mW ,200mA ,SOT-323

$0.011728 More
BC856

Bipolar Transistors ,BC856 ,PNP ,VCEO:65V ,VCBO: 80V ,200mW ,100mA ,SOT-23,3B

$0.000000 More
MMSTA92

Bipolar Transistors ,MMSTA92 ,PNP ,VCEO:305V ,VCBO: 310V ,200mW ,200mA ,SOT-323

$0.000000 More
2SC4617

Bipolar Transistors ,2SC4617 ,NPN ,VCEO:50V ,VCBO: 60V ,150mW ,150mA ,SOT-523,BQ

$0.000000 More
BCW68

Bipolar Transistors ,BCW68 ,PNP ,VCEO:45V ,VCBO: 60V ,330mW ,800mA ,SOT-23,DG

$0.000000 More
2SC4618

Bipolar Transistors ,2SC4618 ,NPN ,VCEO:25V ,VCBO: 40V ,150mW ,50mA ,SOT-523,AP

$0.000000 More

Product Recommendation Maker Dynamics Applications

Design and Manufacturing Process of Silicon Carbide (SiC) MOSFET Chip For silicon carbide MOSFETs (SiC MOSFETs), high-quality substrates can be purchased externally, and high-quality epitaxial wafers can also be purchased externally. However, this only provides a good foundation for obtaining a silicon carbide device. High performance silicon carbide devices have extremely high requirements for device design and manufacturing processes. This article will introduce you to the design and manufacturing process of SiC MOSFET devices.

The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows: The requirements for the driver board of SiC silicon carbide MOS dual pulse testing equipment are as follows:

Prospect sharing of silicon carbide (SiC) substrate sheets Silicon carbide (SiC) substrate is one of the key materials for manufacturing SiC devices, which can provide high lattice matching, low defect density, and high-quality surface flatness. With the continuous expansion of the silicon carbide power device market, silicon carbide substrate sheets have also been widely used and are expected to continue to maintain rapid growth in the coming years.

Voltage drop factors of silicon carbide (SiC) diodes The voltage drop of silicon carbide (SiC) diodes refers to the electromotive force difference of SiC diodes. Silicon carbide diode is a semiconductor device with a P-N junction structure that can be used to control current or voltage. The voltage drop of a diode refers to the electromotive force difference between the P-N junction of the diode in the forward conducting state, that is, the forward bias voltage. This is due to the potential difference between the contact surfaces in the diode.

What is MOSFET VDS ringing? VDS ringing refers to the phenomenon where VDS (DC source drain voltage) oscillates when using silicon carbide MOSFETs. This is due to the special working principle of MOSFET, as MOSFET is a switching device that has the ability to change between on and off states.

SiC MOSFET module is a power semiconductor device made of a new material, silicon carbide (SiC), which outperforms mainstream silicon (Si) IGBT and MOSFET devices in high-speed switching performance and high-temperature environments. In industrial equipment applications that require higher rated voltage and larger current capacity, SiC MOSFET modules can meet the application needs, including inverters, converters, and photovoltaic inverters for rail cars, achieving low loss and miniaturization of the system.

What are the differences between gallium nitride (GaN) and silicon carbide (SiC)? Gallium nitride (GaN) and silicon carbide (SiC) power transistors, two types of compound semiconductor devices, have emerged as solutions. These devices compete with long-life silicon power lateral diffusion metal oxide semiconductor (LDMOS) MOSFETs and super junction MOSFETs. GaN and SiC devices are similar in some aspects, but there are also significant differences.

The difference between Schottky diodes and silicon carbide Schottky diodes Schottky diodes and silicon carbide Schottky diodes are two different types of diodes.

5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

What are the differences between SiC SBD and SiC MOSFET? SiC SBD and SiC MOSFET are chips made of polarized silicon carbide material, which have high heat dissipation and conductivity. The difference lies in:

Product number：	QT-TQT404P45VC05020501CJA
Manufacturer Product Number：	BC807
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	45V
Base Voltage(VCBO) ：	50V
Power Disspation ：	300mW
package ：	SOT-23
Description：	Bipolar Transistors ,BC807 ,PNP ,VCEO:45V ,VCBO: 50V ,300mW ,500mA ,SOT-23,5A

BC807,CJ,Bipolar Transistors

BC807

Series Introduce Find Similar

Series Introduce Find Similar

File

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

{{ isChinese?level2Category.viewNameCn:level2Category.viewNameEn }}

BC807,CJ,Bipolar Transistors

BC807

Series Introduce Find Similar

Series Introduce Find Similar

File

Related Series

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications

Product Recommendation Maker Dynamics Applications