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BC807W,CJ,Bipolar Transistors

BC807W

Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5C

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The image is for reference only, please refer to the drawing for details

Data Sheet： BC807W_SOT-323

Product number：	QT-TQT405P45VC05060502CJC
Manufacturer Product Number：	BC807W
Manufacturer ：	CJ
Series ：	CJ-TRANSISTOR
Product Type ：	Bipolar Transistors
Polarity ：	PNP
Emitter Voltage(VCEO) ：	45V
Base Voltage(VCBO) ：	50V
Power Disspation ：	200mW
package ：	SOT-323
Description：	Bipolar Transistors ,BC807W ,PNP ,VCEO:45V ,VCBO: 50V ,200mW ,500mA ,SOT-323,5C

Series Introduce Find Similar

Attribute Name	Attribute Value
Manufacturer	CJ
Product Series	CJ-TRANSISTOR
Product Type	Bipolar Transistors
EU RoHS	Compliant(2011/65/EU)
EU REACH	Dose not contain REACH SVHC(1907/2006/EC)

File

File Type	File Name
Data Sheet	BC807W_SOT-323

Lead time： Estimated delivery date 2025-05-14

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5 important techniques for selecting gallium nitride (SiC) MOSFETs To prove that your choice of SiC as the preferred power semiconductor for switch mode design is correct, please consider the following prominent features. Compared to standard or super junction MOSFETs or even IGBTs, SiC devices can operate at higher voltages, frequencies, and temperatures. Most of the power loss of other devices does not exist in SiC devices, so the efficiency of SiC devices can reach over 90% in most applications. Initially, SiC devices were more expensive than other MOSFETs or IGBTs.

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